NTMD6601NR2G ON Semiconductor, NTMD6601NR2G Datasheet - Page 5

• Manufacturer Part Number: NTMD6601NR2G
• Description: MOSFET N-CH 80V 1.1A 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD6601NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
0.1
10
1.0E-05
1
D = 0.5
0.02
0.05
0.01
0.1
SINGLE PULSE
0.2
1.0E-04
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E-03
Figure 14. Diode Reverse Recovery Waveform
I
S
Figure 13. Thermal Response
t
p
1.0E-02
NTMD6601NR2G
http://onsemi.com
di/dt
t
a
5
t, TIME (s)
Chip
t
1.0E-01
rr
t
b
I
S
0.0175 W
0.25 I
0.0154 F
S
1.0E+00
0.0854 F
0.0710 W
Normalized to qja at 10s.
TIME
0.2706 W
0.3074 F
1.0E+01
1.7891 F
0.5776 W
1.0E+02
0.7086 W
107.55 F
Ambient
1.0E+03