NTMD6601NR2G ON Semiconductor, NTMD6601NR2G Datasheet - Page 3

• Manufacturer Part Number: NTMD6601NR2G
• Description: MOSFET N-CH 80V 1.1A 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD6601NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.5
0.4
0.3
0.2
0.1
5
4
3
2
1
0
0
2.5
1.5
0.5
0
0
2
1
0
-50
0.2
Figure 1. On-Region Characteristics
V
I
D
V
GS
-25
Figure 5. On-Resistance Variation with
7 V
DS
V
= 1.0 A
0.4
Figure 3. On-Resistance versus
Drain Current and Temperature
GS
8 V
= 5.0 V
, DRAIN-TO-SOURCE VOLTAGE (V)
1
9 V
T
= 5.0 V
J
0.6
, JUNCTION TEMPERATURE (°C)
0
I
D
, DRAIN CURRENT (A)
10 V
0.8
2
25
Temperature
T
T
T
1
J
J
J
= 100°C
= -55°C
= 25°C
50
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
3
6 V
75
T
5 V
1.4
J
4 V
= 25°C
1.6
V
100
GS
4
= 3.5 V
NTMD6601NR2G
1.8
http://onsemi.com
125
2
5
150
3
100,000
10,000
1000
0.25
0.15
0.05
100
0.3
0.2
0.1
10
6
5
4
3
2
1
0
0
1
0
10
0
Figure 4. On-Resistance versus Drain Current
T
V
J
V
GS
= 25°C
DS
20
Figure 6. Drain-To-Source Leakage
= 0 V
V
V
≥ 10 V
1
Figure 2. Transfer Characteristics
DS
GS
1
, DRAIN-TO-SOURCE VOLTAGE (V)
, GATE-TO-SOURCE VOLTAGE (V)
T
Current versus Voltage
30
J
I
D
= 100°C
, DRAIN CURRENT (A)
2
and Gate Voltage
2
T
T
40
J
J
= 150°C
V
= 100°C
V
GS
GS
3
T
= 5.0 V
= 10 V
J
50
= - 55°C
3
T
J
4
= 25°C
60
4
5
70
80
6
5