UPA2791GR-E2-AT Renesas Electronics America, UPA2791GR-E2-AT Datasheet - Page 11

• Manufacturer Part Number: UPA2791GR-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2791GR-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

-2.5
-1.5
-0.5
160
140
120
100
-25
-20
-15
-10
80
60
40
20
-5
-2
-1
0
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-50
-1
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
D
DS
V
-0.5
= −1 mA
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GS
T
DS
= −10 V
ch
= − 10 V
- Drain to Source Voltage - V
- Channel Temperature - °C
0
I
D
V
- Drain Current - A
-1
GS
= −4.5 V
-1.5
-10
50
− 4.5 V
−10 V
-2
100
Pulsed
Pulsed
-2.5
Data Sheet G18207EJ2V0DS
-100
150
-3
-0.0001
-0.001
0.001
-0.01
-100
0.01
-0.1
160
140
120
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
-10
0.1
80
60
40
20
10
-1
-100
0
1
FORWARD TRANSFER CHARACTERISTICS
0
0
T
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
μ
V
Pulsed
A
DS
= 150°C
V
−25°C
= −10 V
V
GS
75°C
25°C
-1 m
GS
- Gate to Source Voltage - V
-1
-5
- Gate to Source Voltage - V
I
T
D
-10 m
A
- Drain Current - A
= 150°C
−25°C
25°C
75°C
-10
-2
-100 m
μ
PA2791GR
V
Pulsed
-15
-3
I
Pulsed
DS
D
-1
= −3.0 A
= −10 V
-10
-20
-4
9