UPA2791GR-E2-AT Renesas Electronics America, UPA2791GR-E2-AT Datasheet - Page 10

• Manufacturer Part Number: UPA2791GR-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2791GR-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(2) P-channel
8
-0.01
-100
120
100
-0.1
-10
80
60
40
20
-1
0
-0.01
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Mounted on ceramic substrate of
2000 mm
T
Single pulse
A
= 25°C
20
I
I
D(pulse)
D(DC)
V
T
DS
A
2
-0.1
- Ambient Temperature - °C
x 1.6 mmt, 1 unit
40
- Drain to Source Voltage - V
1000
100
0.1
10
1
60
100
DC
μ
Mounted on ceramic substrate of 2000 mm
80
T
Single pulse
-1
A
= 25°C
100 120 140 160
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 m
-10
10 m
Data Sheet G18207EJ2V0DS
-100
PW - Pulse Width - s
100 m
1
2
x 1.6 mmt, 1 unit
2.5
1.5
0.5
2
1
0
0
R
th(ch-A)
2 units
1 unit
10
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
20
=
T
73.5°C/Wi
A
40
- Ambient Temperature - °C
100
60
80
Mounted on ceramic
substrate of
2000 mm
100 120 140 160
1000
μ
PA2791GR
2
x 1.6 mmt