UPA2791GR-E2-AT Renesas Electronics America, UPA2791GR-E2-AT Datasheet
UPA2791GR-E2-AT
Specifications of UPA2791GR-E2-AT
Related parts for UPA2791GR-E2-AT
UPA2791GR-E2-AT Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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N- AND P-CHANNEL POWER MOS FET DESCRIPTION μ The PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel R = 36.0 mΩ MAX. (V DS(on 50.0 mΩ MAX. ...
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ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Note2 Drain Current (DC 25°C) C Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 ...
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ELECTRICAL CHARACTERISTICS (T N-channel CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time ...
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P-channel CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A (1) N-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 0 Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 4 - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS ...
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P-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA -100 I ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -25 - − -15 − 4.5 V -10 -5 Pulsed 0 0 -0.5 -1 -1 Drain to Source Voltage - V DS GATE TO ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 160 140 120 V = −4 100 80 − Pulsed 0 - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS 100 ...
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TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel side MARKING INFORMATION RECOMMENDED SOLDERING CONDITIONS μ The PA2791GR should be soldered and mounted under the following recommended conditions. For soldering methods ...
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The information in this document is current as of November, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...