BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet - Page 7

• Manufacturer Part Number: BSD235C L6327
• Description: MOSFET N/P-CH 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235C L6327

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA, 530mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 47pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235C L6327; BSD235C L6327TR; SP000442466

Rev.2.2
9 Typ. output characteristics (P)
I
parameter: V
11 Typ. drain-source on resistance (P)
R
parameter: V
D
=f(V
DS(on)
2000
1800
1600
1400
1200
1000
800
600
400
200
DS
=f(I
0
5
4
3
2
1
0
); T
0
0
2.2 V
D
); T
j
=25 °C
2.5 V
GS
GS
j
=25 °C
1
1
3 V
2
10 V
V
I
3.3 V
DS
D
2
[A]
[V]
4.5 V
3
3.5 V
3.5 V
1.8 V
3
4.5 V
3 V
10 V
2 V
4
2.5 V
2.3 V
page 7
4
5
10 Typ. output characteristics (N)
I
parameter: V
12 Typ. drain-source on resistance (N)
R
parameter: V
D
=f(V
DS(on)
700
600
500
400
300
200
100
DS
=f(I
5
4
3
2
1
0
0
0
0
); T
2.2 V
D
); T
j
=25 °C
GS
GS
2.5 V
j
10 V
=25 °C
1
1
3.5 V
4.5 V
2
V
I
D
DS
2
[A]
3 V
2.5 V
2.3 V
2 V
1.8 V
[V]
3 V
3
3
3.5 V
4.5 V
4
BSD235C
10 V
3.3 V
2011-07-14
4
5