BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet - Page 11

• Manufacturer Part Number: BSD235C L6327
• Description: MOSFET N/P-CH 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235C L6327

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA, 530mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 47pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235C L6327; BSD235C L6327TR; SP000442466

Rev.2.2
25 Typ. gate charge (P)
V
parameter: V
27 Drain-source breakdown voltage (P)
V
GS
BR(DSS)
=f(Q
25
24
23
22
21
20
19
18
17
16
6
5
4
3
2
1
0
-60
=f(T
0
gate
); I
j
); I
DD
D
-20
0.1
D
=-0.53 A pulsed
=-250 µA
0.2
20
-Q
T
gate
-4 V
j
0.3
60
[°C]
[nC]
-10 V
100
0.4
-16 V
140
0.5
180
page 11
0.6
26 Typ. gate charge (N)
V
parameter: V
28 Drain-source breakdown voltage (N)
V
GS
BR(DSS)
=f(Q
25
24
23
22
21
20
19
18
17
16
6
5
4
3
2
1
0
-60
=f(T
0
gate
); I
j
); I
DD
D
0.1
-20
=0.95 A pulsed
D
=250 µA
0.2
20
4 V
Q
T
gate
j
0.3
10 V
[°C]
[nC]
60
16 V
0.4
100
BSD235C
0.5
140
2011-07-14
0.6