IRF7904TRPBF International Rectifier, IRF7904TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7904TRPBF
• Description: MOSFET DUAL N-CH 30V 7.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7904TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 1.4W, 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 7.6A, 11A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.001
0.01
0.01
100
100
0.1
0.1
10
10
1
1
1E-006
1E-006
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
D = 0.50
D = 0.50
0.10
0.02
0.20
0.05
0.01
0.10
0.02
0.20
0.05
0.01
1E-005
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
0.0001
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.001
0.001
Fig 27. Layout Diagram
0.01
0.01
τ
τ
J
J
τ
τ
J
τ
J
τ
1
Ci= τi/Ri
1
τ
Ci= τi/Ri
τ
1
Ci= i/Ri
1
Ci= i/Ri
R
R
1
R
1
R
1
1
0.1
0.1
τ
τ
2
2
R
τ
R
τ
2
2
2
R
2
R
2
2
R
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
τ
3
3
R
3
3
τ
R
τ
3
3
3
3
1
1
τ
τ
C
C
τ
τ
Ri (°C/W)
Ri (°C/W)
10.908
34.35
17.15
17.122
53.325
19.551
10
10
1.1482
39.7
0.02108
τi (sec)
0.74555
0.018925
τi (sec)
39.2
100
100
7