IRF7904TRPBF International Rectifier, IRF7904TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7904TRPBF
• Description: MOSFET DUAL N-CH 30V 7.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7904TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 1.4W, 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 7.6A, 11A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 13. Normalized On-Resistance vs. Temperature
Fig 15. Typical Source-Drain Diode Forward Voltage
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Fig 17. Typical On-Resistance vs.Gate Voltage
100.0
10.0
1.0
0.1
1.5
1.0
0.5
40
35
30
25
20
15
10
0.2
2.0
-60 -40 -20
I D = 7.6A
V GS = 10V
T J = 150°C
0.4
V SD , Source-to-Drain Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
4.0
0
Q1 - Control FET
0.6
20
T J = 25°C
40
0.8
6.0
60
1.0
80 100 120 140 160
T J = 125°C
T J = 25°C
V GS = 0V
8.0
I D = 7.6A
1.2
Typical Characteristics
10.0
1.4
Fig 16. Typical Source-Drain Diode Forward Voltage
Fig 14. Normalized On-Resistance vs. Temperature
Fig 18. Typical On-Resistance vs.Gate Voltage
100.0
10.0
1.5
1.0
0.5
1.0
0.1
25
20
15
10
5
-60 -40 -20
2.0
0.0
T J = 150°C
I D = 11A
V GS = 10V
0.4
V GS , Gate-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T J , Junction Temperature (°C)
4.0
0.8
Q2 - Synchronous FET
T J = 25°C
0
1.2
20
40
6.0
1.6
60
2.0
80 100 120 140 160
T J = 25°C
T J = 125°C
8.0
V GS = 0V
2.4
I D = 11A
2.8
10.0
3.2
5