IRF7904TRPBF International Rectifier, IRF7904TRPBF Datasheet - Page 3

no-image

IRF7904TRPBF

Manufacturer Part Number
IRF7904TRPBF
Description
MOSFET DUAL N-CH 30V 7.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7904TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
1.4W, 2W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Vgs(th) (max) @ Id
2.25V @ 25µA
Current - Continuous Drain (id) @ 25° C
7.6A, 11A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16.2 mOhm @ 7.6A, 10V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
20.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.6 A
Power Dissipation
2.0 W
Mounting Style
SMD/SMT
Gate Charge Qg
7.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7904TRPBF
Manufacturer:
LATTICE
Quantity:
3 100
Part Number:
IRF7904TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7904TRPBF
0
Company:
Part Number:
IRF7904TRPBF
Quantity:
8 000
www.irf.com
100.0
10.0
100
100
0.1
1.0
0.1
10
10
1
1
Fig 1. Typical Output Characteristics
0.1
0.1
1.0
Fig 5. Typical Transfer Characteristics
Fig 3. Typical Output Characteristics
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.0
2.5V
2.5V
Q1 - Control FET
1
1
V DS = 15V
≤ 60µs PULSE WIDTH
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 150°C
3.0
≤ 60µs PULSE WIDTH
Tj = 25°C
10
10
TOP
BOTTOM
TOP
BOTTOM
4.0
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
Typical Characteristics
100
100
5.0
100.0
Fig 2. Typical Output Characteristics
10.0
100
100
0.1
1.0
0.1
10
10
1
1
0.1
0.1
Fig 6. Typical Transfer Characteristics
1.0
Fig 4. Typical Output Characteristics
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
Q2 - Synchronous FET
2.0
2.5V
2.5V
1
1
T J = 25°C
V DS = 15V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 150°C
≤ 60µs PULSE WIDTH
Tj = 25°C
3.0
10
10
TOP
BOTTOM
TOP
BOTTOM
4.0
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
100
100
5.0
3

Related parts for IRF7904TRPBF