IRF7338TRPBF International Rectifier, IRF7338TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRF7338TRPBF
• Description: MOSFET N/P-CH 12V 6.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7338TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 6.3A, 3A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
0.00001
1
800
600
400
200
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
Crss
Ciss
Coss
-V DS , Drain-to-Source Voltage (V)
(THERMAL RESPONSE)
0.0001
V GS = 0V,
C iss
SHORTED
C rss
C oss
SINGLE PULSE
= C ds + C gd
= C gd
= C gs + C gd , C ds
10
f = 1 MHZ
0.001
t , Rectangular Pulse Duration (sec)
1
100
0.01
12
10
8
6
4
2
0
0
I D = -2.9A
1. Duty factor D =
2. Peak T
Notes:
0.1
2
Q G Total Gate Charge (nC)
J
= P
V DS = -9.6V
VDS= -6.0V
4
DM
x Z
t / t
1
IRF7338
thJA
P
2
DM
1
6
+ T
A
t
1
t
2
8
9
10
10