IRF7338TRPBF International Rectifier, IRF7338TRPBF Datasheet

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IRF7338TRPBF

Manufacturer Part Number
IRF7338TRPBF
Description
MOSFET N/P-CH 12V 6.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7338TRPBF.pdf (12 pages)

Specifications of IRF7338TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
8.6nC @ 4.5V
Vgs(th) (max) @ Id
1.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
6.3A, 3A
Drain To Source Voltage (vdss)
12V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
34 mOhm @ 6A, 4.5V
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
34 mOhms
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
6.3 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
5.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7338TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7338TRPBF
Quantity:
15 994
l
l
l
l
Thermal Resistance
www.irf.com
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Description
Symbol
R
R
V
I
I
I
P
P
V
D
D
DM
T
DS
D
D
GS
θJL
θJA
J,
@ T
@ T
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
ƒ
GS
GS
@ 4.5V
@ 4.5V
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
N-Channel
±12 „
6.3
5.2
12
26
Typ.
–––
–––
HEXFET
8
7
6
5
-55 to + 150
D1
D1
D2
Max.
D2
2.0
1.3
16
R
V
®
DS(on)
DSS
IRF7338
Power MOSFET
P-Channel
Max.
62.5
20
0.034Ω 0.150Ω
-3.0
-2.5
-12
-13
N-Ch
12V
± 8.0
SO-8
PD - 94372C
P-Ch
-12V
Units
°C/W
mW/°C
°C
W
V
1
6/2/03

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IRF7338TRPBF Summary of contents

Page 1

Ultra Low On-Resistance Dual N and P Channel MOSFET l Surface Mount l l Available in Tape & Reel Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance ...

Page 2

IRF7338 Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) 100 25° 10V 20µs PULSE WIDTH 1 1.0 2 Gate-to-Source ...

Page 4

IRF7338 2 6.3A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature J 0.05 0.04 0. 6.3A 0.02 3.0 4.0 5.0 6.0 V GS, Gate -to -Source Voltage ...

Page 5

0V, C iss = SHORTED 800 C rss = oss = Ciss 600 Coss 400 200 Crss ...

Page 6

IRF7338 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 T , Case Temperature C Fig 12. Maximum Drain Current Vs. Case Temperature Charge Fig 14a. Basic Gate ...

Page 7

VGS TOP -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V 10 BOTTOM -1.5V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) 100 25° 150°C V ...

Page 8

IRF7338 2.0 -3. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature J 0.12 0.10 0. -3.0A 0.06 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage ...

Page 9

0V, C iss = SHORTED C rss = C gd 600 C oss = Ciss 400 200 Coss Crss ...

Page 10

IRF7338 3.0 2.4 1.8 1.2 0.6 0 100 T , Case Temperature C Fig 26. Maximum Drain Current Vs. Case Temperature Charge Fig 28a. Basic Gate Charge Waveform 10 ...

Page 11

SO-8 Package Details 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ...

Page 12

IRF7338 SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING ...

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