IRF7338TRPBF International Rectifier, IRF7338TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7338TRPBF
• Description: MOSFET N/P-CH 12V 6.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7338TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 6.3A, 3A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7338
6
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Fig 14a. Basic Gate Charge Waveform
25
GS
Fig 12. Maximum Drain Current Vs.
V
G
50
T , Case Temperature
C
Q
Case Temperature
GS
75
Charge
Q
Q
GD
G
100
( C)
°
125
150
Fig 13b. Switching Time Waveforms
Fig 13a. Switching Time Test Circuit
V
90%
10%
V
Fig 14b. Gate Charge Test Circuit
DS
GS
12V
V
GS
t
Same Type as D.U.T.
d(on)
Current Regulator
.2µF
t
r
50KΩ
3mA
≤ 0.1 %
Current Sampling Resistors
≤ 1
.3µF
I
G
t
D.U.T.
d(off)
I
www.irf.com
D
t
f
+
-
V
DS
+
-