TT8M2TR Rohm Semiconductor, TT8M2TR Datasheet - Page 6

• Manufacturer Part Number: TT8M2TR
• Description: MOSFET N/P-CH 30V 2.5A TSST8
• Manufacturer: Rohm Semiconductor

Specifications of TT8M2TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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○
TT8M2
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www.rohm.com
2009 ROHM Co., Ltd. All rights reserved.
1000
1000
100
100
10
10
4
3
2
1
0
0.1
0.1
0
Fig.7 Static Drain-Source On-State
V
Pulsed
Ta=25°C
Pulsed
Fig.1 Typical Output Characteristics( Ⅰ )
GS
DRAIN-SOURCE VOLTAGE : -V
Fig.4 Static Drain-Source On-State
= -1.8V
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅳ )
0.2
Resistance vs. Drain Current( Ⅰ )
DRAIN-CURRENT : -I
V
0.4
GS
= -1.3V
1
1
0.6
V
D
V
V
V
V
GS
[A]
V
V
V
V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
GS
GS
GS
GS
GS
GS
GS
GS
= -1.1V
= -4.5V
= -2.5V
= -1.8V
= -1.5V
= -1.5V
= -1.8V
= -2.5V
= -4.5V
D
DS
0.8
[A]
Ta=25°C
Pulsed
[V]
1
10
10
1000
1000
100
100
10
10
4
3
2
1
0
0.1
0.1
0
Fig.8 Static Drain-Source On-State
V
Pulsed
V
Pulsed
GS
GS
Fig.2 Typical Output Characteristics( Ⅱ )
DRAIN-SOURCE VOLTAGE : -V
Fig.5 Static Drain-Source On-State
= -4.5V
= -1.5V
DRAIN-CURRENT : -I
V
V
V
Resistance vs. Drain Current( Ⅳ )
GS
GS
GS
2
= -10V
= -1.8V
= -1.5V
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅱ )
4
1
1
6
V
D
V
6/8
[A]
GS
GS
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
= -1.1V
GS
= -1.2V
D
[A]
= -1.3V
Ta=25°C
Pulsed
8
DS
[V]
10
10
10
0.001
1000
0.01
100
100
0.1
10
10
10
1
0
1
Fig.3 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : -V
0.1
0.1
0
V
Pulsed
V
Pulsed
V
Pulsed
DS
DS
GS
Ta= - 25°C
Ta= 125°C
= -10V
= -10V
= -2.5V
Fig.6 Static Drain-Source On-State
Ta= 75°C
Ta= 25°C
Fig.9 Forward Transfer Admittance
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅲ )
DRAIN-CURRENT : -I
vs. Drain Current
0.5
1
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
GS
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
[V]
D
D
[A]
[A]
2009.06 - Rev.A
10
1.5
10
Data Sheet