HCT802 TT Electronics/Optek Technology, HCT802 Datasheet

HCT802

Manufacturer Part Number

HCT802

Description

MOSFET DUAL ENHANCE HERMETIC SMD

Manufacturer

TT Electronics/Optek Technology

Datasheet

1.HCT802.pdf (2 pages)

Specifications of HCT802

Fet Type

N and P-Channel

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5 Ohm @ 1A, 10V

Drain To Source Voltage (vdss)

90V

Current - Continuous Drain (id) @ 25° C

2A, 1.1A

Vgs(th) (max) @ Id

2.5V @ 1mA

Input Capacitance (ciss) @ Vds

70pF @ 25V

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

Non-Standard SMD

Lead Free Status / RoHS Status

Lead free / Not applicable

Gate Charge (qg) @ Vgs

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Optek Technology, Inc.

Prod uct Bul le tin HCT802

Sep tem ber 1996

Dual En hance ment Mode MOS FET

Types HCT802, HCT802TX, HCT802TXV

Fea tures

De scrip tion

HCT802 offers an N-Channel and P-

Channel MOS transistor in a hermetic

ceramic surface mount package. The

devices used are similar to industry

standards 2N6661 N-Channel device

and VP1008 P-Channel device. These

two enhancement mode MOSFETS

are particularly well matched for V

Order HCT802TX for processing per

MIL-PRF-19500. Typical screening

and lot acceptance tests are provided

on page 13-4. TX products receive a

C and a V

at 150

DS(on)

6 pad surface mount package

Two devices selected for V

and R

Full TX Processing Available

Gold plated contacts

D(on)

DS(on)

HTRB at 16 V for 48 hrs. at 150

, R

= 90V

N-Channel = 1.5A

P-Channel = 1.1A

DS(on)

HTRB at 72 V for 160 hrs.

similarity

and G

1215 W. Crosby Road

, I

D(on)

Ab so lute Maxi mum Rat ings

Drain- Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V

Gate- Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain Cur rent (Lim ited by Tj max) N- Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A

Op er at ing and Stor age Tem pera ture . . . . . . . . . . . . . . . . . . . . . . . . -55

Power Dis si pa tion

(Ts = Substrate that the package is soldered to)

Notes

(1) This rating is provided as an aid to designers. It is dependent upon mounting material and

methods and is not measureable as an outgoing test.

= 25

C (Both de vices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W To tal

C (Both de vices equally driven). . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W To tal

Carrollton, Texas 75006

15-34

P- Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A

(972) 323-2200

Fax (972) 323-2396

C to +150

20 V

(1)

Related parts for HCT802

HCT802 Summary of contents

Page 1

... R similarity DS(on) Full TX Processing Available Gold plated contacts De scrip tion HCT802 offers an N-Channel and P- Channel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS ...

Page 2

... Types HCT802, HCT802TX, HCT802TXV Elec tri cal Char ac ter is tics ( Sym bol Pa rame ters B Drain- Source Break down VDSS V Gate Thresh old Volt age TH I Gate- Body Leak age GSS I Zero Gate Volt age Drain Cur rent DSS I On- State Drain Cur rent ...

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