TT8M2TR Rohm Semiconductor, TT8M2TR Datasheet
TT8M2TR
Specifications of TT8M2TR
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TT8M2TR Summary of contents
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Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. Application Switching Packaging specifications Package Taping Type Code TR Basic ordering ...
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TT8M2 <Tr2 : Pch> Parameter Drain−source voltage Gate−source voltage Continuous Drain current Pulsed Continuous Source current (Body diode) Pulsed ∗ ≤ 10µs, Duty cycle ≤ 1% <Tr1 AND Tr2> Parameter Total power dissipation Channel temperature Range of Storage ...
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TT8M2 Electrical characteristics (Ta=25°C) < Characteristics for the Tr2( Pch ).> Parameter Symbol Min. Gate-source leakage I GSS −20 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −0.3 Gate threshold voltage V GS (th) Static ...
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TT8M2 Electrical characteristics curves <Nch> 2.5 Ta=25°C Pulsed V = 10V 4. =4. 2. ...
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TT8M2 10 V =0V GS Pulsed 1 Ta=125°C 0.1 Ta=75°C Ta=25°C Ta=-25°C 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1000 Ta=25°C R =10Ω 15V Pulsed ...
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TT8M2 <Pch> -4. -2. -1. -1. Ta=25°C Pulsed -1. -1. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE ...
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TT8M2 300 Ta=25°C Pulsed 250 I = -2.5A D 200 150 100 -1. GATE-SOURCE VOLTAGE : -V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ciss ...
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TT8M2 Measurement circuits < Nch > D.U. Fig.1-1 Switching Time Measurement Circuit D.U.T. I G(Const Fig.2-1 ...
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