ZXMC6A09DN8TA Diodes Zetex, ZXMC6A09DN8TA Datasheet - Page 7

MOSFET N+P 60V 4.8A 8-SOIC

ZXMC6A09DN8TA

Manufacturer Part Number
ZXMC6A09DN8TA
Description
MOSFET N+P 60V 4.8A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC6A09DN8TA

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 8.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.9A, 3.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
24.2nC @ 10V
Input Capacitance (ciss) @ Vds
1407pF @ 40V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC6A09DN8TATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC6A09DN8TA
Manufacturer:
DIODES/美台
Quantity:
20 000
ISSUE 4 - MAY 2005
1800
1600
1400
1200
1000
800
600
400
200
Capacitance v Drain-Source Voltage
0
V
f = 1MHz
GS
V
= 0V
DS
1
- Drain - Source Voltage (V)
C
ISS
N-CHANNEL TYPICAL CHARACTERISTICS
C
OSS
C
RSS
10
7
10
Gate-Source Voltage v Gate Charge
8
6
4
2
0
0
I
D
= 3.5A
5
Q - Charge (nC)
ZXMC6A09DN8
10
15
V
DS
= 15V
20
25

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