ZXMC6A09DN8TA Diodes Zetex, ZXMC6A09DN8TA Datasheet - Page 4

MOSFET N+P 60V 4.8A 8-SOIC

ZXMC6A09DN8TA

Manufacturer Part Number
ZXMC6A09DN8TA
Description
MOSFET N+P 60V 4.8A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC6A09DN8TA

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 8.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.9A, 3.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
24.2nC @ 10V
Input Capacitance (ciss) @ Vds
1407pF @ 40V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC6A09DN8TATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC6A09DN8TA
Manufacturer:
DIODES/美台
Quantity:
20 000
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMC6A09DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(1)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
amb
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
4
MIN.
1.0
60
TYP.
1407
28.5
11.0
12.4
24.2
0.85
26.3
26.6
121
4.9
3.3
5.2
3.5
15
59
MAX.
0.045
0.070
0.95
100
1.0
UNIT CONDITIONS
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=250µA, V
=250 A, V
=3.5A
=3.5A
GS
=25°C, I
=25°C, I
ISSUE 4 - MAY 2005
=60V, V
=15V,I
=40V, V
=15V,V
=15V,V
=10V, I
=4.5V, I
=0V
=30V, I
= 20V, V
6.0Ω, V
D
S
F
D
GS
GS
=3.5A,
=8.2A
D
=6.6A,
GS
D
GS
GS
=8.2A
GS
DS
=1.0A
=7.4A
=5V,
=10V,
=0V
DS
=0V,
=10V
=0V
= V
=0V
GS

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