ZXMC6A09DN8TA Diodes Zetex, ZXMC6A09DN8TA Datasheet

MOSFET N+P 60V 4.8A 8-SOIC

ZXMC6A09DN8TA

Manufacturer Part Number
ZXMC6A09DN8TA
Description
MOSFET N+P 60V 4.8A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC6A09DN8TA

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 8.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.9A, 3.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
24.2nC @ 10V
Input Capacitance (ciss) @ Vds
1407pF @ 40V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC6A09DN8TATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC6A09DN8TA
Manufacturer:
DIODES/美台
Quantity:
20 000
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMC
6A09
ISSUE 4 - MAY 2005
DEVICE
ZXMC6A09DN8TA
ZXMC6A09DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor drive
LCD backlighting
(BR)DSS
(BR)DSS
= -60V; R
= 60V; R
REEL
13’‘
7
’‘
WIDTH
12mm
12mm
TAPE
DS(ON)
DS(ON)
= 0.045 ; I
= 0.055 ; I
QUANTITY
2500 units
PER REEL
500 units
D
D
= 5.1A
1
= -4.8A
Q1 = N-CHANNEL
ZXMC6A09DN8
PINOUT
Q2 = P-CHANNEL
Top view
SO8

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ZXMC6A09DN8TA Summary of contents

Page 1

... Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMC6A09DN8TA 7 12mm ’‘ ZXMC6A09DN8TC 13’‘ 12mm DEVICE MARKING ZXMC 6A09 ISSUE 4 - MAY 2005 = 0.045 ; 0.055 ; ...

Page 2

ZXMC6A09DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a)(d) Power Dissipation ...

Page 3

ISSUE 4 - MAY 2005 ZXMC6A09DN8 CHARACTERISTICS 3 ...

Page 4

ZXMC6A09DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 5

P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On ...

Page 6

ZXMC6A09DN8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 6 ...

Page 7

N-CHANNEL TYPICAL CHARACTERISTICS 1800 1600 1400 C 1200 ISS 1000 f = 1MHz OSS 800 600 400 200 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage ISSUE 4 - ...

Page 8

ZXMC6A09DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 8 ...

Page 9

P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 ZXMC6A09DN8 9 ...

Page 10

ZXMC6A09DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 ...

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