SI4500BDY-T1-E3 Vishay, SI4500BDY-T1-E3 Datasheet - Page 2

MOSFET N/P-CH HALF BRG 20V 8SOIC

SI4500BDY-T1-E3

Manufacturer Part Number
SI4500BDY-T1-E3
Description
MOSFET N/P-CH HALF BRG 20V 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4500BDY-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 9.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.6A, 3.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Common Quad Drain
Resistance Drain-source Rds (on)
0.02 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
6.6 A @ N Channel or 3.8 A @ P Channel
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
9.1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4500BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4500BDY-T1-E3
Manufacturer:
NXP
Quantity:
60 000
Part Number:
SI4500BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 810
Part Number:
SI4500BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4500BDY-T1-E3
Quantity:
70 000
Si4500BDY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
a
b
b
b
J
= 25 °C, unless otherwise noted
b
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
rr
gd
fs
gs
r
f
g
V
V
V
I
DS
D
V
DS
DS
I
DS
D
≅ - 1 A, V
= - 10 V, V
I
F
I
≅ 1 A, V
= - 20 V, V
V
V
= 10 V, V
F
V
V
V
= 20 V, V
V
V
V
V
= - 2.1 A, dI/dt = 100 A/µs
V
DS
V
GS
V
V
DS
V
V
I
= 2.1 A, dI/dt = 100 A/µs
DS
DS
S
DS
I
DD
DS
GS
DS
GS
GS
S
DD
DS
DS
= - 2.1 A, V
= - 5 V, V
= V
= - 4.5 V, I
= 2.1 A, V
= - 15 V, I
= 0 V, V
= V
= - 20 V, V
= - 10 V, R
= - 2.5 V, I
= 5 V, V
= 4.5 V, I
= 2.5 V, I
= 20 V, V
= 10 V, R
= 15 V, I
GEN
N-Channel
P-Channel
N-Channel
P-Channel
GEN
GS
GS
Test Conditions
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= - 4.5 V, R
= 10 V, R
= 4.5 V, I
D
= 0 V, T
GS
D
= 0 V, T
GS
GS
= - 250 µA
D
D
GS
D
D
D
= 250 µA
GS
GS
L
GS
D
L
= ± 12 V
= 9.1 A
= - 5.3 A
= 4.5 V
= - 4.5 V
= 9.1 A
= - 5.3 A
= 3.3 A
= 10 Ω
= - 1 A
= 0 V
= 10 Ω
= 0 V
= 0 V
= 0 V
J
D
J
g
D
= 55 °C
= 55 °C
= 9.1 A
= 6 Ω
g
= - 5.3 A
= 6 Ω
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
- 0.6
Min.
- 20
0.6
30
S09-0705-Rev. D, 27-Apr-09
0.016
0.048
0.024
0.082
Typ.
- 0.8
Document Number: 72281
0.8
6.0
2.5
1.3
3.2
1.6
11
20
35
55
35
25
29
11
35
50
31
15
30
a
± 100
± 100
0.020
0.060
0.030
0.100
Max.
- 1.2
- 1.5
1.5
1.2
- 1
- 5
17
50
30
80
60
50
85
30
60
60
50
1
5
9
Unit
µA
nC
nA
ns
V
A
Ω
S
V

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