SI4500BDY-T1-GE3 Vishay, SI4500BDY-T1-GE3 Datasheet

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SI4500BDY-T1-GE3

Manufacturer Part Number
SI4500BDY-T1-GE3
Description
MOSFET N/P-CH 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4500BDY-T1-GE3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 9.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.6A, 3.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
N And P Channel
Continuous Drain Current Id
7A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
22mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4500BDY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4500BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Surface Mounted on FR4 Board.
t
N-Channel
N-Channel
P-Channel
P-Channel
10 sec
G
G
S
S
Complementary MOSFET Half-Bridge (N- and P-Channel)
1
1
2
2
1
2
3
4
Top View
SO-8
J
J
V
a, b
a, b
= 150 C)
= 150 C)
DS
a
a
–20
–20
20
20
(V)
Parameter
P
Parameter
8
7
6
5
a, b
a, b
D
D
D
D
a, b
0.065 @ V
0.100 @ V
0.030 @ V
0.040 @ V
r
DS(on)
GS
GS
GS
GS
New Product
( )
= –4.5 V
= –2.5 V
Steady-State
Steady-State
= 4.5 V
= 2.5 V
t
T
T
T
T
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
10 sec
G
G
Symbol
S
Symbol
2
1
T
R
R
R
J
V
V
I
P
P
, T
DM
thJC
I
I
I
thJA
thJA
DS
GS
D
D
S
D
D
b l
stg
I
D
(A)
7.0
6.0
4.5
3.5
S
S
2
1
Typ
N-Channel
N-Channel
38
73
17
1.7
20
7.0
5.5
D
12
30
Max
www.vishay.com FaxBack 408-970-5600
50
95
22
–55 to 150
2.5
1.6
Vishay Siliconix
Typ
P-Channel
P- Channel
40
73
20
–1.7
–20
4.5
3.5
Si4500DY
12
20
Max
50
95
26
Unit
U i
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

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SI4500BDY-T1-GE3 Summary of contents

Page 1

... S 1 Symbol N-Channel stg N-Channel S Symbol b l Typ t 10 sec thJA thJA Steady-State 73 Steady-State R 17 thJC Si4500DY Vishay Siliconix D P-Channel Unit 20 – 7.0 4.5 5.5 3 1.7 –1.7 2 1.6 –55 to 150 C P- Channel Max Typ Max Unit C/W C www.vishay.com FaxBack 408-970-5600 2-1 ...

Page 2

... Turn-Off Delay Time t t Fall Time Fall Time Source-Drain Reverse Recovery Time Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle www.vishay.com FaxBack 408-970-5600 2-2 New Product Test Condition 250 GS(th) GS(th) ...

Page 3

... Si4500DY Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature – 100 125 150 T – Junction Temperature ( C) J www.vishay.com FaxBack 408-970-5600 2-3 3.0 20 ...

Page 4

... T – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com FaxBack 408-970-5600 2-4 New Product 0.10 0.08 0. 1.0 1 100 125 150 0.001 –2 –1 ...

Page 5

... Square Wave Pulse Duration (sec 2 1 1500 1200 900 600 300 Si4500DY Vishay Siliconix 1 10 Transfer Characteristics T = – 125 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS www.vishay.com FaxBack 408-970-5600 20 2-5 ...

Page 6

... 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0 250 A D 0.0 –0.2 –0.4 –50 – – Temperature ( C) J www.vishay.com FaxBack 408-970-5600 2-6 New Product 1.6 1.4 1.2 1.0 0.8 0 –50 0.20 0.16 0. 0.08 0. 1.25 1. 100 125 150 0 ...

Page 7

... S-00269—Rev. A, 26-Apr-99 New Product –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) Si4500DY Vishay Siliconix Notes Duty Cycle Per Unit Base = C/W thJA ( – thJA 4. Surface Mounted 10 100 600 1 10 www.vishay.com FaxBack 408-970-5600 2-7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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