SI3586DV-T1-E3 Vishay, SI3586DV-T1-E3 Datasheet - Page 4

MOSFET N/P-CH 20V 2.9/2.1A 6TSOP

SI3586DV-T1-E3

Manufacturer Part Number
SI3586DV-T1-E3
Description
MOSFET N/P-CH 20V 2.9/2.1A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI3586DV-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.9A, 2.1A
Vgs(th) (max) @ Id
1.1V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.9 A @ N Channel or 2.1 A @ P Channel
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
2.9A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
47mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1.1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3586DV-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3586DV-T1-E3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI3586DV-T1-E3
Manufacturer:
ROHM
Quantity:
538
Part Number:
SI3586DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3586DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.2
0.1
0.0
0.1
10
- 50
1
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
I
T
D
= 150 °C
0.4
J
= 250 µA
25
- Temperature (°C)
50
0.6
75
0.8
0.01
T
0.1
10
J
100
1
0.1
= 25 °C
Limited by
r
DS(on)
* V
1.0
Safe Operating Area, Junction-to-Case
125
GS
New Product
> minimum V
V
150
DS -
1.2
Single Pulse
T
Drain-to-Source Voltage (V)
C
1
= 25 °C
GS
at which r
DS(on)
10
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
is specified
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
1 ms
10 ms
100 ms
dc
1 s
10 s
V
100
1
GS
0.1
- Gate-to-Source Voltage (V)
Time (sec)
2
I
D
= 3.4 A
S-60422-Rev. C, 20-Mar-06
Document Number: 72310
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