SI3586DV-T1-E3 Vishay, SI3586DV-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI3586DV-T1-E3
• Description: MOSFET N/P-CH 20V 2.9/2.1A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3586DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1.1V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.9 A @ N Channel or 2.1 A @ P Channel
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.9A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 47mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3586DV-T1-E3TR

Si3586DV
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
V
r
I
DS(on)
t
t
I
I
D(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
t
SD
t
rr
gd
fs
gs
r
f
g
g
V
DS
I
V
V
D
V
I
DS
DS
D
DS
≅ - 1 A, V
= - 10 V, V
I
I
F
≅ 1 A, V
New Product
F
= - 20 V, V
= 10 V, V
V
V
V
V
V
V
= 20 V, V
= - 1.05 A, di/dt = 100 A/µs
V
V
V
V
I
= 1.05 A, di/dt = 100 A/µs
V
V
V
V
V
V
V
DS
GS
GS
GS
GS
I
S
DS
S
DD
DS
DS
V
DS
DS
DS
DS
GS
GS
DD
DS
= - 1.05 A, V
DS
= 1.05 A, V
≤ - 5 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 1.8 V, I
= V
= V
= - 20 V, V
= - 5 V, I
= - 10 V, R
= 0 V, V
= 0 V, V
≥ 5 V, V
= 20 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 5 V, I
GEN
GEN
N-Channel
P-Channel
N-Channel
P-Channel
Test Conditions
GS
GS
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= 4.5 V, R
= - 4.5 V, R
= 4.5 V, I
D
= 0 V, T
D
= 0 V, T
GS
GS
GS
GS
D
D
= - 250 µA
D
D
D
D
D
D
= 250 µA
GS
GS
L
= 3.4 A
= - 2.5 A
GS
GS
L
= 4.5 V
= - 4.5 V
= 3.4 A
= - 2.5 A
= 3.2 A
= - 2.0 A
= - 2.5 A
= - 1.0 A
= ± 8 V
= ± 8 V
= 10 Ω
= 10 Ω
= 0 V
= 0 V
= 0 V
= 0 V
J
J
D
G
D
= 85 °C
= 85 °C
G
= 3.4 A
= 6 Ω
= - 2.5 A
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.40
0.40
Min
- 5
5
0.047
0.086
0.054
0.116
0.075
0.170
S-60422-Rev. C, 20-Mar-06
- 0.8
0.65
0.68
Typ
0.8
4.1
0.8
1.3
2.6
9.8
Document Number: 72310
13
30
28
52
55
25
55
20
32
25
25
6
5
± 100
± 100
0.060
0.110
0.070
0.145
0.100
0.220
- 1.1
- 1.1
Max
- 10
1.1
1.1
6.0
7.5
- 1
10
45
45
85
85
40
85
30
50
40
40
1
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V