SI1563DH-T1-E3 Vishay, SI1563DH-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1563DH-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI1563DH-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A, 880mA
• Vgs(th) (max) @ Id: 1V @ 100µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.13 A @ N Channel or 0.88 A @ P Channel
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.13A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 490mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1563DH-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71963
S10-1054-Rev. B, 03-May-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
Duty Cycle = 0.5
0.2
0.1
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
0.02
0.02
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
A
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
100
thJA
Si1563DH
t
t
1
2
(t)
= 170 °C/W
www.vishay.com
600
10
5