SI1563DH-T1-E3 Vishay, SI1563DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1563DH-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI1563DH-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A, 880mA
• Vgs(th) (max) @ Id: 1V @ 100µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.13 A @ N Channel or 0.88 A @ P Channel
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.13A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 490mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1563DH-T1-E3TR

Si1563DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.0
0.2
0.1
0.1
2
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
I
0.4
D
Threshold Voltage
T
J
= 100 µA
25
- Temperature (°C)
T
J
= 150 °C
50
0.6
75
0.8
0.01
T
0.1
Limited by R
10
J
1
100
= 25 °C
0.1
* V
Safe Operating Area, Junction-to-Ambient
1.0
125
GS
Single Pulse
T
Limited
DS(on)
A
> minimum V
I
D(on)
V
= 25 °C
150
DS
1.2
*
- Drain-to-Source Voltage (V)
1
BVDSS Limited
GS
at which R
10
DS(on)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
I
5
4
3
2
1
0
DM
is specified
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10, DC
0
Limited
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
0.1
1
V
GS
- Gate-to-Source Voltage (V)
2
1
Time (s)
S10-1054-Rev. B, 03-May-10
Document Number: 71963
I
D
3
= 1.13 A
10
4
100
600
5