SI1563DH-T1-E3 Vishay, SI1563DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1563DH-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI1563DH-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A, 880mA
• Vgs(th) (max) @ Id: 1V @ 100µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.13 A @ N Channel or 0.88 A @ P Channel
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.13A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 490mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1563DH-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71963
S10-1054-Rev. B, 03-May-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
V
I
V
D
DS
GS
= 1.28 A
On-Resistance vs. Drain Current
= 10 V
= 1.8 V
0.3
V
0.5
V
DS
1
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
= 5 V thru 2 V
D
Gate Charge
- Drain Current (A)
0.6
1.0
2
0.9
1.5
V
V
3
GS
GS
1.2
= 2.5 V
= 4.5 V
1 V
1.5 V
2.0
1.5
4
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
160
120
80
40
0.0
0
- 50
0
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 1.13 A
= 4.5 V
4
V
0.5
V
GS
Transfer Characteristics
0
DS
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
oss
25
Capacitance
8
1.0
50
Vishay Siliconix
T
C
25 °C
12
75
= - 55 °C
Si1563DH
C
iss
www.vishay.com
1.5
100
16
125 °C
125
2.0
150
20
3