SI1029X-T1-GE3 Vishay, SI1029X-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI1029X-T1-GE3
• Description: MOSFET N/P-CH 60V SC89-6
• Manufacturer: Vishay

Specifications of SI1029X-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA, 190mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 305mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1029X-T1-GE3TR

Si1029X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (T
www.vishay.com
4
1000
100
10
1
0.00
V
GS
Source-Drain Diode Forward Voltage
T
J
= 0 V
0.3
= 125 °C
V
SD
- Source-to-Drain Voltage (V)
0.6
T
0.9
J
T
- 0.2
- 0.4
- 0.6
- 0.8
= - 55 °C
J
0.4
0.2
0.0
= 25 °C
Threshold Voltage Variance Over Temperature
- 50
1.2
- 25
T
1.5
0
J
- Junction Temperature (°C)
25
A
= 25 °C, unless otherwise noted)
50
I
D
= 250 µA
75
100
5
4
3
2
1
0
0
125
On-Resistance vs. Gate-to-Source Voltage
150
2
I
D
V
GS
= 200 mA
- Gate-to-Source Voltage (V)
4
S10-2432-Rev. C, 25-Oct-10
Document Number: 71435
6
I
D
= 500 mA
8
10