SI4816BDY-T1-E3 Vishay, SI4816BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4816BDY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4816BDY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Power - Max: 1W, 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A @ Channel 1 or 8.2 A @ Channel 2
• Power Dissipation: 1000 mW @ Channel 1 or 1250 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4816BDY-T1-E3TR

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
0.05
0.04
0.03
0.02
0.01
0.00
40
35
30
25
20
15
10
5
0
0
0
5
On-Resistance vs. Drain Current
1
V
10
DS
V
Output Characteristics
V
GS
I
D
– Drain-to-Source Voltage (V)
GS
= 4.5 V
– Drain Current (A)
15
= 10 thru 4 V
2
20
3 V
Symbol
I
V
C
rm
25
3
F
T
J
30
V
= 25 °C, unless otherwise noted
GS
4
= 10 V
2 V
35
V
V
I
40
F
R
R
5
= 1.0 A, T
= - 30 V, T
Test Conditions
= 30 V, T
V
V
I
F
R
R
= 1.0 A
= 30 V
= 10 V
J
J
J
= 125 °C
= 100 °C
= 125 °C
1200
1000
800
600
400
200
40
35
30
25
20
15
10
5
0
0
0.0
0
0.5
5
C
V
rss
1.0
GS
V
Min.
Transfer Characteristics
DS
– Gate-to-Source Voltage (V)
1.5
10
– Drain-to-Source Voltage (V)
Capacitance
T
25 °C
2.0
C
0.004
Typ.
= 125 °C
0.47
0.36
C
0.7
3.0
50
15
oss
Vishay Siliconix
2.5
Si4816BDY
C
3.0
iss
20
0.100
Max.
0.50
0.42
10
20
www.vishay.com
- 55 °C
3.5
25
4.0
Unit
mA
pF
V
4.5
30
3