SI4501ADY-T1-E3 Vishay, SI4501ADY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4501ADY-T1-E3
• Description: MOSFET N/P-CH HALF BRG 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4501ADY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V, 8V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.1A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Common Quad Drain
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 6.3 A @ N Channel or 4.1 A @ P Channel
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4501ADY-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 71922
S-61005-Rev. B, 12-Jun-06
0.05
0.04
0.03
0.02
0.01
0.00
40
32
24
16
8
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 8.8 A
On-Resistance vs. Drain Current
= 15 V
V
V
2
V
GS
3
GS
6
DS
Q
= 10 thru 5 V
Output Characteristics
= 4.5 V
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
4
12
6
4 V
18
6
9
V
3 V
GS
= 10 V
12
24
8
10
15
30
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
8
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
= 8.8 A
V
V
1
= 10 V
6
GS
DS
T
C
Transfer Characteristics
J
0
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
2
12
C
50
Vishay Siliconix
iss
T
25 °C
C
Si4501ADY
= - 55 °C
18
3
75
www.vishay.com
100
125 °C
24
4
125
150
5
30
3