ZXMP3A16DN8TA Diodes Zetex, ZXMP3A16DN8TA Datasheet - Page 4

MOSFET 2P-CH 30V 5.5A 8-SOIC

ZXMP3A16DN8TA

Manufacturer Part Number
ZXMP3A16DN8TA
Description
MOSFET 2P-CH 30V 5.5A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMP3A16DN8TA

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
29.6nC @ 10V
Input Capacitance (ciss) @ Vds
1022pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMP3A16DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMP3A16DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A16DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(1)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
4
MIN.
-1.0
-30
-0.85
1022
TYP.
37.1
21.4
17.2
29.6
21.7
16.1
267
229
9.2
3.8
6.5
2.8
8.6
MAX.
0.045
0.070
-0.95
-1.0
100
UNIT CONDITIONS
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/μs
D
D
D
D
J
J
DS
GS
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-250μA, V
=-250 A,
=-4.2A
=-4.2A
=25°C, I
=25°C, I
=6.0Ω, V
ISSUE 2 - MAY 2007
=-15V,V
=-30V, V
= 20V, V
= V
=-10V, I
=-4.5V, I
=-15V,I
=-15 V, V
=-15V,V
=0V
=-15V, I
GS
S
F
D
GS
=-2A,
GS
=-3.6A,
D
GS
=-4.2A
D
GS
D
GS
=-4.2A
GS
DS
=-1A
=-3.4A
=-10V,
=-10V
=-5V,
=0V
=0V
=0V,
=0V

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