ZXMP3A16DN8TA Diodes Zetex, ZXMP3A16DN8TA Datasheet - Page 2

• Manufacturer Part Number: ZXMP3A16DN8TA
• Description: MOSFET 2P-CH 30V 5.5A 8-SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMP3A16DN8TA

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 29.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1022pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP3A16DN8TR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ZXMP3A16DN8
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
Junction to Ambient
(a)(d)
(b)(e)
(b)(d)
(c)
A
A
A
=25°C
=25°C
=25°C
@V
@V
GS
GS
GS
(a)(d)
(a)(e)
(b)(d)
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=70 C
=25 C
=25 C
(b)
(b)(d)
(a)(d)
(b)(d)
10 sec.
2
SYMBOL
V
V
I
I
I
I
P
P
P
T
SYMBOL
R
R
R
D
DM
S
SM
D
D
D
j
DSS
GS
θJA
θJA
θJA
:T
stg
-55 to +150
VALUE
LIMIT
1.25
-5.5
-4.4
-4.2
-3.2
-30
-20
-20
1.8
2.1
100
10
14
17
70
60
20
ISSUE 2 - MAY 2007
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C/W
°C
W
W
W
V
V
A
A
A
A
A
A