ZXMP3A16DN8TA Diodes Zetex, ZXMP3A16DN8TA Datasheet

MOSFET 2P-CH 30V 5.5A 8-SOIC

ZXMP3A16DN8TA

Manufacturer Part Number
ZXMP3A16DN8TA
Description
MOSFET 2P-CH 30V 5.5A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMP3A16DN8TA

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
29.6nC @ 10V
Input Capacitance (ciss) @ Vds
1022pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMP3A16DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMP3A16DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMP
3A16
ISSUE 2 - MAY 2007
DEVICE
ZXMP3A16DN8TA
ZXMP3A16DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
= -30V; R
DS(ON)
REEL
13’‘
7
’‘
= 0.045 ; I
WIDTH
12mm
12mm
TAPE
D
QUANTITY
2500 units
PER REEL
= -5.5A
500 units
1
ZXMP3A16DN8
PINOUT
Top view
SO8

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ZXMP3A16DN8TA Summary of contents

Page 1

... Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMP3A16DN8TA 7 12mm ’‘ ZXMP3A16DN8TC 13’‘ 12mm DEVICE MARKING ZXMP 3A16 ISSUE 2 - MAY 2007 = -5.5A D QUANTITY PER REEL ...

Page 2

ZXMP3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a)(d) Power Dissipation ...

Page 3

R DS(on) 10 Limited 100ms 100m 10ms Single Pulse 1ms T =25°C 10m amb One active die 100m 1 -V Drain-Source Voltage (V) DS Safe Operating Area 110 T =25°C 100 amb One active die 90 80 ...

Page 4

ZXMP3A16DN8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On ...

Page 5

T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer Characteristics 1.5V 100 -V GS ...

Page 6

ZXMP3A16DN8 ISSUE 2 - MAY 2007 6 ...

Page 7

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

Page 8

ZXMP3A16DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 ...

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