SI7945DP-T1-GE3 Vishay, SI7945DP-T1-GE3 Datasheet - Page 5
![MOSFET DL P-CH 30V PPAK 8-SOIC](/photos/5/42/54289/pkg_5881_sml.jpg)
SI7945DP-T1-GE3
Manufacturer Part Number
SI7945DP-T1-GE3
Description
MOSFET DL P-CH 30V PPAK 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI7945DP-T1-GE3.pdf
(6 pages)
Specifications of SI7945DP-T1-GE3
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
20V
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 10.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Module Configuration
Dual
Power Dissipation
RoHS Compliant
Continuous Drain Current Id
10.9A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7945DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7945DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 485
Part Number:
SI7945DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72090.
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
0.01
0.1
2
1
10
-
4
Duty Cycle = 0.5
0.2
0.1
0.02
Single Pulse
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-
3
Square Wave Pulse Duration (s)
10
-
2
Vishay Siliconix
Si7945DP
www.vishay.com
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