SI7945DP-T1-GE3 Vishay, SI7945DP-T1-GE3 Datasheet - Page 4
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SI7945DP-T1-GE3
Manufacturer Part Number
SI7945DP-T1-GE3
Description
MOSFET DL P-CH 30V PPAK 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI7945DP-T1-GE3.pdf
(6 pages)
Specifications of SI7945DP-T1-GE3
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
20V
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 10.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Module Configuration
Dual
Power Dissipation
RoHS Compliant
Continuous Drain Current Id
10.9A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7945DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7945DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 485
Part Number:
SI7945DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7945DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10 -
3
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
- Temperature (°C)
Single Pulse
25
I
D
= 250 µA
10 -
50
2
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
1
0.1
Limited by R
10 -
125
Limited
I
D( on)
1
Single Pulse
T
A
Square Wave Pulse Duration (s)
150
V
= 25 °C
DS
DS(on)
Safe Operating Area
- Drain-to-Source V oltage (V)
1
BVDSS Limited
1
1 0
40
30
20
10
0
0.01
I
DM
Single Pulse Power, Junction-to-Ambient
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
1 0
0.1
100
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
T
Time (s)
t
A
1
S09-0227-Rev. D, 09-Feb-09
= P
t
2
Document Number: 72090
DM
100
Z
10
th J A
th J A
t
t
1
2
(t )
= 60 °C/W
100
600
1000