SI7945DP-T1-GE3 Vishay, SI7945DP-T1-GE3 Datasheet - Page 2
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SI7945DP-T1-GE3
Manufacturer Part Number
SI7945DP-T1-GE3
Description
MOSFET DL P-CH 30V PPAK 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI7945DP-T1-GE3.pdf
(6 pages)
Specifications of SI7945DP-T1-GE3
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
20V
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 10.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Module Configuration
Dual
Power Dissipation
RoHS Compliant
Continuous Drain Current Id
10.9A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7945DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7945DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 485
Part Number:
SI7945DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7945DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
30
24
18
12
6
0
0
a
1
V
a
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
V
GS
2
a
= 10 V thru 4 V
Symbol
3
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
rr
gd
fs
gs
r
f
g
3 V
4
V
DS
V
I
D
DS
= - 15 V, V
≅ - 1 A, V
I
F
= - 30 V, V
V
V
V
V
V
V
V
V
= - 2.9 A, dI/dt = 100 A/µs
5
GS
DS
GS
I
DS
DS
DS
S
DD
DS
= - 2.9 A, V
Test Conditions
= - 10 V, I
= - 15 V, I
= - 4.5 V, I
= V
≤ - 5 V, V
= 0 V, V
= - 30 V, V
= - 15 V, R
GEN
GS
GS
GS
, I
= - 10 V, I
= - 10 V, R
D
GS
= 0 V, T
GS
D
D
= - 250 µA
D
GS
= - 10.9 A
= - 10.9 A
GS
L
= ± 20 V
= - 8.8 A
= - 10 V
= 15 Ω
= 0 V
= 0 V
D
J
= 55 °C
= - 10.9 A
g
30
24
18
12
= 6 Ω
6
0
0.0
0.5
V
GS
1.0
Min.
- 1.0
- 30
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.5
T
0.016
0.025
Typ.
- 0.8
25 °C
C
130
7.3
26
49
13
15
15
80
85
2.0
S09-0227-Rev. D, 09-Feb-09
= 125 °C
Document Number: 72090
2.5
± 100
0.020
0.031
Max.
- 3.0
- 1.2
200
120
130
- 1
- 5
74
25
25
3.0
- 55 °C
3.5
Unit
nA
µA
nC
ns
Ω
V
A
S
V
4.0