ECH8620-TL-E SANYO, ECH8620-TL-E Datasheet - Page 4

• Manufacturer Part Number: ECH8620-TL-E
• Description: MOSFET N/P-CH 100V 2/1.5A ECH8
• Manufacturer: SANYO

Specifications of ECH8620-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 260 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2A, 1.5A
• Gate Charge (qg) @ Vgs: 13.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1157-2

0.001
0.01
600
500
400
300
200
100
600
500
400
300
200
100
1.0
0.1
1.0
0.1
10
0.01
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
0
0
--60
7
5
3
2
7
5
3
2
0.2
0
I D =0.5A
--40
2
2
--20
3
0.4
1A
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
4
Ambient Temperature, Ta -- °C
5 7
0
R DS (on) -- V GS
Drain Current, I D -- A
6
R DS (on) -- Ta
0.1
20

I S -- V SD
0.6
y
fs -- I D
8
40
2
3
60
10
0.8
5 7
80
12
1.0
100
14
1.0
120
V DS =10V
2
V GS =0V
Ta=25 ° C
3
16
140
IT10624
IT10625
IT10622
IT10623
[Nch]
[Nch]
[Nch]
[Nch]
ECH8620
5 7
160
1.2
18
--0.001
--0.01
1000
1000
--1.0
--0.1
900
800
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
1.0
0.1
10
--
0
0
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
7
5
3
2
--0.2
--60
0.01
0
I D = --0.5A
V DS = --10 V
--40
2
--
2
--20
3
--0.4
--1A
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- °C
--
5 7
4
0
R DS (on) -- V GS
Drain Current, I D -- A
--
R DS (on) -- Ta
0.1
20
--

--0.6
I S -- V SD
6
y
fs -- I D
40
2
--
8
3
60
--0.8
5 7
--
10
80
--
1.0
100
--
No. A0659-4/6
12
--1.0
120
2
2
Ta=25 ° C
V GS =0V
--
3
14
140
IT10611
IT10612
IT10613
IT10614
[Pch]
[Pch]
[Pch]
[Pch]
5
--1.2
--
160
7
16