ECH8620-TL-E SANYO, ECH8620-TL-E Datasheet - Page 3

• Manufacturer Part Number: ECH8620-TL-E
• Description: MOSFET N/P-CH 100V 2/1.5A ECH8
• Manufacturer: SANYO

Specifications of ECH8620-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 260 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2A, 1.5A
• Gate Charge (qg) @ Vgs: 13.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1157-2

Switching Time Test Circuit
[N-channel]
P.G
10V
2.0
1.5
1.0
0.5
0V
PW=10µs
D.C.≤1%
0
4
3
2
1
0
0
0
V DS =10V
V IN
0.1
0.5
V IN
0.2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
1.0
G
50Ω
0.3
1.5
I D -- V DS
I D -- V GS
0.4
V DD =50V
D
0.5
2.0
S
I D =1A
R L =50Ω
0.6
2.5
ECH8620
V OUT
0.7
3.0
V GS =2.5V
0.8
3.5
0.9
IT10620
IT10621
[Nch]
[Nch]
1.0
4.0
ECH8620
[P-channel]
--10V
P.G
0V
PW=10µs
D.C.≤1%
--1.5
--1.2
--0.9
--0.6
--0.3
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
V IN
0
0
0
0
V DS = -- 10V
--0.1
V IN
--0.5
--0.2
50Ω
G
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
--1.0
--0.3
V DD = --50V
D
--0.4
I D -- V DS
I D -- V GS
--1.5
S
I D = --1A
R L =50Ω
--0.5
ECH8620
--2.0
--0.6
V OUT
--0.7
--2.5
--0.8
No. A0659-3/6
--3.0
--0.9
IT10609
IT10610
[Pch]
[Pch]
--1.0
--3.5