ECH8619-TL-E SANYO, ECH8619-TL-E Datasheet - Page 3

• Manufacturer Part Number: ECH8619-TL-E
• Description: MOSFET N/P-CH 60V 3/2A ECH8
• Manufacturer: SANYO

Specifications of ECH8619-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A, 2A
• Gate Charge (qg) @ Vgs: 12.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 93mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 869-1156-2

Switching Time Test Circuit
[N-channel]
P.G
10V
3.0
2.5
2.0
1.5
1.0
0.5
0V
PW=10µs
D.C.≤1%
3
2
1
0
0
0
0
V DS =10V
V IN
0.1
0.5
V IN
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
0.2
G
50Ω
1.0
0.3
I D -- V DS
I D -- V GS
V DD =30V
1.5
D
0.4
S
I D =1.5A
R L =20Ω
2.0
0.5
ECH8619
V OUT
2.5
0.6
V GS =2.5V
3.0
0.7
IT08979
IT08980
[Nch]
[Nch]
0.8
3.5
ECH8619
[P-channel]
--10V
P.G
0V
PW=10µs
D.C.≤1%
--2.0
--1.5
--1.0
--0.5
V IN
--4
--3
--2
--1
0
0
0
0
V DS = -- 10V
--0.1
V IN
--0.5
--0.2
50Ω
G
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
--1.0
--0.3
V DD = --30V
D
--0.4
I D -- V DS
I D -- V GS
--1.5
S
I D = --1A
R L =30Ω
--0.5
ECH8619
--2.0
--0.6
V OUT
--0.7
--2.5
--0.8
No. A0658-3/6
--3.0
--0.9
IT10644
IT10645
[Pch]
[Pch]
--1.0
--3.5