ECH8619-TL-E SANYO, ECH8619-TL-E Datasheet - Page 2

• Manufacturer Part Number: ECH8619-TL-E
• Description: MOSFET N/P-CH 60V 3/2A ECH8
• Manufacturer: SANYO

Specifications of ECH8619-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A, 2A
• Gate Charge (qg) @ Vgs: 12.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ECH
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 93mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 869-1156-2

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7011A-001
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
1
8
0.65
Parameter
Bottom View
Top View
2.9
5
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
0.15
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
0 to 0.02
Symbol
t d (on)
t d (off)
t d (on)
t d (off)
 yfs 
Coss
I DSS
I GSS
Coss
Ciss
Crss
V SD
Ciss
Crss
V SD
Qgs
Qgd
Qgs
Qgd
Qg
Qg
t r
t f
t r
t f
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =30V, V GS =10V, I D =3A
V DS =30V, V GS =10V, I D =3A
V DS =30V, V GS =10V, I D =3A
I S =3A, V GS =0V
I D =--1mA, V GS =0V
V DS =--60V, V GS =0V
V GS =±16V, V DS =0V
V DS =--10V, I D =- -1mA
V DS =--10V, I D =- -1A
I D =--1A, V GS =--10V
I D =--0.5A, V GS =- -4V
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--30V, V GS =- -10V, I D =--2A
V DS =--30V, V GS =- -10V, I D =--2A
V DS =--30V, V GS =- -10V, I D =--2A
I S =--2A, V GS =0V
ECH8619
Electrical Connection
Conditions
8
1
7
2
6
3
5
4
min
--1.2
--60
2.1
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
Ratings
typ
--0.82
12.8
0.81
10.5
560
160
210
660
2.1
2.7
3.5
7.0
2.1
2.7
60
41
61
32
54
42
93
30
15
11
11
max
--2.6
--1.2
±10
210
295
1.2
No. A0658-2/6
--1
Unit
mΩ
mΩ
pF
pF
pF
nC
nC
nC
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
S
V