FW342-TL-E SANYO, FW342-TL-E Datasheet - Page 2

• Manufacturer Part Number: FW342-TL-E
• Description: MOSFET N/P-CH 30V 6/5A 8-SOP
• Manufacturer: SANYO

Specifications of FW342-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 5A
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1167-2

Continued from preceding page.
Package Dimensions
unit : mm
2129
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
0.595
1
8
1.27
5.0
Parameter
0.43
4
5
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
0.2
Symbol
t d (on)
t d (off)
t d (on)
t d (off)
Coss
I DSS
I GSS
Coss
Ciss
Crss
V SD
Ciss
Crss
V SD
Qgs
Qgd
Qgs
Qgd
Qg
yfs
Qg
t r
t f
t r
t f
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =10V, I D =6A
V DS =10V, V GS =10V, I D =6A
V DS =10V, V GS =10V, I D =6A
I S =6A, V GS =0
I D =- -1mA, V GS =0
V DS =- -30V, V GS =0
V GS = 16V, V DS =0
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -5A
I D =- -5A, V GS =- -10V
I D =- -3A, V GS =- -4.5V
I D =- -3A, V GS =- -4V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =- -10V, V GS =--10V, I D =- -5A
V DS =- -10V, V GS =--10V, I D =- -5A
V DS =- -10V, V GS =--10V, I D =- -5A
I S =--5A, V GS =0
FW342
Conditions
Electrical Connection
8
1
7
2
6
3
min
--1.2
--30
4.5
5
4
Ratings
typ
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
- -0.85
1000
12.5
0.84
16.5
850
170
125
108
195
150
3.4
2.4
7.5
2.5
2.5
77
61
16
41
62
70
13
82
87
55
max
--2.6
--1.5
1.2
10
53
87
98
--1
No.7912-2/6
Unit
m
m
m
pF
pF
pF
nC
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
S
V
A
A