FW342 Sanyo Semicon Device, FW342 Datasheet
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FW342
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FW342 Summary of contents
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... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FW342 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Symbol ...
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... Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm 2129 5.0 1.27 0.595 0.43 FW342 Symbol Conditions Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit ...
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... FW342 [Nch] 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT07380 [Nch] Ta= IT07382 --15V --10V -- OUT PW= FW342 P 6 =10V 5.0 4.0 3.0 2.0 1 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage (on --60 --40 --20 0 ...
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... V DS =10V = Total Gate Charge --5.0 --4.0 --3.0 --2.0 --1 --0.1 --0.2 --0.3 Drain-to-Source Voltage FW342 [Nch 1.0 10 IT07384 [Nch =15V V GS =10V t d (on 1.0 10 IT07386 [Nch ...
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... Drain Current -- --10V -- --5A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge FW342 [Pch] Ta=25 C --6 --8 --10 --12 --14 --16 IT07392 [Pch --1.0 --10 IT07394 SW Time -- I D [Pch (on ...
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... Allowable Power Dissipation(FET 2 Note on usage : Since the FW342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...