MCH6626-TL-E SANYO, MCH6626-TL-E Datasheet - Page 4

• Manufacturer Part Number: MCH6626-TL-E
• Description: MOSFET N/P-CH 20V 1.6/1A MCPH6
• Manufacturer: SANYO

Specifications of MCH6626-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 800mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.6A, 1A
• Gate Charge (qg) @ Vgs: 1.4nC @ 4V
• Input Capacitance (ciss) @ Vds: 105pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MCPH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1180-2

1000
0.01
0.01
100
100
1.0
1.0
0.1
1.0
0.1
10
10
10
10
0.001
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.1
0
V DD =10V
V GS =4V
2 3
0.3
2
2
5 7
0.4
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
4
Diode Forward Voltage, V SD -- V
0.01
3
0.5
6
Drain Current, I D -- A
Drain Current, I D -- A
t f
SW Time -- I D
2 3
I F -- V SD
0.6
8
y
t d (on)
5
fs -- I D
5 7
0.7
10
7
Ciss
0.1
1.0
0.8
12
2 3
0.9
14
5 7
2
1.0
16
1.0
V DS =10V
f=1MHz
V GS =0
3
1.1
18
IT02920
IT02921
IT02922
IT02923
2 3
[Nch]
[Nch]
[Nch]
[Nch]
1.2
20
MCH6626
5
5
--0.01
--1.0
--0.1
100
100
--10
1.0
1.0
0.1
10
10
--0.01
--
3
2
7
5
3
2
--0.2
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
0.1
0
V DD = --10V
V GS = --4V
t f
--0.3
--2
2
--0.4
--4
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
2
Diode Forward Voltage, V SD -- V
3
--0.5
t d (on)
--6
Drain Current, I D -- A
Drain Current, I D -- A
3
SW Time -- I D
5
--0.6
I F -- V SD
--8
y
7
fs -- I D
Ciss
5
--0.1
--0.7
--10
7
--0.8
--12
2
--
--0.9
1.0
--14
3
V DS = --10V
--1.0
--16
f=1MHz
5
No.7918-4/6
V GS =0
--1.1
2
--18
IT03372
IT03373
IT03374
IT03375
[Pch]
[Pch]
[Pch]
[Pch]
7
--1.0
--1.2
--20
3