MCH6626-TL-E SANYO, MCH6626-TL-E Datasheet

MOSFET N/P-CH 20V 1.6/1A MCPH6

MCH6626-TL-E

Manufacturer Part Number
MCH6626-TL-E
Description
MOSFET N/P-CH 20V 1.6/1A MCPH6
Manufacturer
SANYO
Datasheet

Specifications of MCH6626-TL-E

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
230 mOhm @ 800mA, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.6A, 1A
Gate Charge (qg) @ Vgs
1.4nC @ 4V
Input Capacitance (ciss) @ Vds
105pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-MCPH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Other names
869-1180-2
Ordering number : ENN7918
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : WA
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
The MCH6626 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON-
resistance and high-speed switching, thereby enabling
high-density mounting.
Excellent ON-resistance characteristic.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
General-Purpose Switching Device Applications
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V GSS
V DSS
I DSS
I GSS
Tstg
I DP
Tch
P D
yfs
I D
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =0.8A
I D =0.8A, V GS =4V
I D =0.4A, V GS =2.5V
I D =0.1A, V GS =1.8V
MCH6626
Conditions
Conditions
Package Dimensions
unit : mm
2173A
N-Channel and P-Channel Silicon MOSFETs
2
(Bottom view)
0.8mm)1unit
0.65
4
3
2.0
5
2
1
6
0.3
N-channel
min
[MCH6626]
0.4
1.4
20
93004 TS IM TA-100982
6
1
(Top view)
--55 to +150
1.6
6.4
20
10
Ratings
5
2
0.15
150
0.8
typ
4
3
180
220
300
2.4
MCH6626
P-channel
Continued on next page.
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
max
GI IM
--1.0
--4.0
- -20
230
310
450
10
1.3
10
1
No.7918-1/6
Unit
Unit
m
m
m
W
V
V
A
A
V
V
S
C
C
A
A

Related parts for MCH6626-TL-E

MCH6626-TL-E Summary of contents

Page 1

... Ordering number : ENN7918 General-Purpose Switching Device Applications Features The MCH6626 incorporates an N-channel MOSFET • and a P-channel MOSFET that feature low ON- resistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. • 2.5V drive. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter ...

Page 2

... -10V =--4V =--1A Qgd -10V =--4V =-- =--1A [P-channel -- OUT PW=10 s D.C. 1% P.G Ratings min typ max 105 1.4 0.3 0.3 0.92 1.2 --20 --0.4 --1.3 0.7 1.2 380 500 540 760 115 1.5 0.4 0.3 --0.9 --1 --10V --500mA OUT G MCH6626 50 S Unit -- No.7918-2/6 ...

Page 3

... I D =0.4A 0.8A 300 250 200 150 100 Gate-to-Source Voltage (on 400 350 300 250 200 150 100 50 0 --60 --40 -- Ambient Temperature MCH6626 [Nch] -- 1.0 -- 0.9 -- 0.8 -- 0.7 -- 0.6 -- 0.5 -- 0.4 -- 0.3 -- 0 0.8 0.9 1.0 0 IT02916 [Nch --10V -- 1 ...

Page 4

... Diode Forward Voltage Time -- I D 100 V DD =10V = (on 1 0.1 1.0 Drain Current Ciss, Coss, Crss -- V DS 1000 Ciss 100 Drain-to-Source Voltage MCH6626 [Nch =10V 1.0 --0.01 IT02920 [Nch] -- --1 --0 --0.01 0.9 1.0 1.1 1.2 --0.2 IT02921 [Nch --10V --4V ...

Page 5

... Operation in this 0.1 area is limited (on Ta= Single pulse 2 Mounted on a ceramic board(900mm 0. 0.1 1.0 Drain-to-Source Voltage 1.0 0.8 0.6 0.4 0 100 Ambient Tamperature MCH6626 -- 4 --10V --1A -- 3.5 -- 3.0 -- 2.5 -- 2.0 -- 1.5 -- 1.0 -- 0.5 0 1.2 1.4 1.6 0 IT03307 -- 10 < 1 Operation in this -- 0.1 area is limited (on). ...

Page 6

... Note on usage : Since the MCH6626 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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