BSO350N03 Infineon Technologies, BSO350N03 Datasheet - Page 2

• Manufacturer Part Number: BSO350N03
• Description: MOSFET N-CHAN 30V 5A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO350N03

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 6µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO350N03; BSO350N03INTR; BSO350N03NT; BSO350N03XT; SP000080984

Rev. 1.6
1)
2)
connection. PCB is vertical in still air.
3)
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
See figure 3
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
G
minimal footprint,
t
minimal footprint,
steady state
6 cm
t
6 cm
steady state
V
V
V
T
V
T
V
V
V
|V
I
p
p
D
page 2
≤10 s
≤10 s
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=6 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
2
2
cooling area
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
=6 µA
D
GS
GS
DS
DS(on)max
=6 A
=5 A
=0 V,
=0 V,
=0 V
2)
2)
,
,
,
min.
1.2
30
6
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
1.6
0.1
0.8
10
10
42
29
12
-
-
-
-
-
-
max.
BSO350N03
110
150
100
100
50
63
90
52
35
2
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-01-16