BSO350N03 Infineon Technologies, BSO350N03 Datasheet
BSO350N03
Specifications of BSO350N03
BSO350N03INTR
BSO350N03NT
BSO350N03XT
SP000080984
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BSO350N03 Summary of contents
Page 1
... Marking 350N3 Symbol Conditions =25 ° =70 ° =25 °C D,pulse A =25 Ω = /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSO350N03 mΩ PG-DSO-8 Value Unit 10 secs steady state 4 kV/µs ±20 V 2.0 1.4 W -55 ... 150 °C 55/150/56 2008-01-16 ...
Page 2
... (BR)DSS µA GS(th = DSS T =25 ° = =125 ° = GSS =4 DS(on = |>2 DS(on)max (one layer, 70 µm thick) copper area for drain page 2 BSO350N03 Values Unit min. typ. max K 110 - - 150 , - - 1.2 1 0.1 1 µ 100 - 10 100 mΩ Ω 2008-01-16 ...
Page 3
... D G d(off g(th = plateau V =0 g(sync = oss =25 ° S,pulse =25 ° = /dt =400 A/µs F page 3 BSO350N03 Values Unit min. typ. max. - 360 480 pF - 130 170 - 2.2 3 2.2 3 1.4 2.1 - 1.1 1 0.57 0.76 - 0.73 1.1 - 1.2 1.8 - 2.8 3 2.4 3 3 2008-01-16 ...
Page 4
... Rev. 1.6 2 Drain current I =f 120 160 0 [° Max. transient thermal impedance Z =f(t thJS p parameter 100 10 µs 0.5 100 µ 0.1 10 100 0.00001 [V] DS page 4 BSO350N03 ≥ ≤ 120 T [° 0.05 single pulse 0.0001 0.001 0.01 0 [s] p 160 2008-01-16 ...
Page 5
... V 7 Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.6 6 Typ. drain-source on resistance R =f(I DS(on) parameter: V 120 100 2 Typ. forward transconductance g =f 125 °C 25 ° [V] GS page 5 BSO350N03 ); T =25 ° 3.6 V 3 [A] D =25 ° [ 4 2008-01-16 ...
Page 6
... Forward characteristics of reverse diode I =f parameter: T 100 10 1 Crss 0 0.0 [V] DS page 6 BSO350N03 ); µA 6 µA - 100 140 T [° 150 °C 25 °C, 98% 150 ° 0.2 0.4 0.6 0.8 1.0 V [V] SD 180 25 °C 1.2 2008-01-16 ...
Page 7
... I =f parameter: T j(start) 10 125 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.6 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSO350N03 ); pulsed gate [nC] gate ate 2008-01-16 ...
Page 8
... Package Outline PG-DSO-8: Outline Rev. 1.6 PG-DSO-8 page 8 BSO350N03 2008-01-16 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user Rev. 1.6 page 9 BSO350N03 2008-01-16 ...