BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 6

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Safe operating area (N-Ch.)
I
parameter : D = 0 , T
Transient thermal impedance (N-Ch.)
Z
parameter : D = t
D
thJC
K/W
= f ( V
10
10
10
10
10
10
10
10
10
A
-1
-2
-1
2
1
0
= f ( t
2
1
0
10
10
BSO 615 C
BSO 615 C
-1
-5
DS
p
10
)
single pulse
)
-4
10
-3
p
10
/ T
10
0
A
-2
= 25 °C
10
-1
10
10
0
1
10
D = 0.50
1
Preliminary data
DC
V
0.20
0.10
0.05
0.02
0.01
V
t
t p = 4.7µs
p
s
DS
10 µs
100 µs
1 ms
10 ms
10
10
2
3
Page 6
Safe operating area (P-Ch.)
I
parameter : D = 0 , T
Transient thermal impedance (P-Ch.)
Z
parameter : D = t
D
K/W
thJC
= f ( V
-10
-10
-10
-10
10
10
10
10
10
A
-1
-2
-1
-2
= f ( t
1
0
2
1
0
-10
10
BSO 615 C
BSO 615 C
-5
DS
-1
p
10
)
single pulse
)
-4
10
-3
p
-10
/ T
10
0
A
-2
= 25 °C
10
-1
10
-10
0
BSO 615 C
1999-10-28
1
10
D = 0.50
1
DC
V
0.20
0.10
0.05
0.02
0.01
V
t
t p = 90.0µs
p
s
DS
100 µs
1 ms
10 ms
-10
10
3
2