BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 11

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Avalanche Energy E
parameter: I
R
Typ. gate charge (N-Ch.)
V
parameter: I
GS
GS
mJ
V
= f ( Q
50
40
35
30
25
20
15
10
16
12
10
= 25
5
0
8
6
4
2
0
25
0
BSO 615 C
2
45
Gate
D
D
4
0,2
= 3.1 A , V
= 3.1 A
)
65
V
6
DS max
8
85
AS
10
= f ( T
105
DD
12
= 25 V
14
j
125
) (N-Ch.)
0,8
16
V
Preliminary data
°C
DS max
nC
Q
T
j
Gate
165
20
Page 11
Avalanche Energy E
parameter: I
R
Typ. gate charge (P-Ch.)
V
parameter: I
GS
GS
mJ
-16
-12
-10
V
80
60
50
40
30
20
10
= f ( Q
= 25
-8
-6
-4
-2
0
0
25
0
BSO 615 C
2
45
Gate
D
D
4
= -2 A , V
= -2 A
0,2
)
65
V
6
DS max
8
85
AS
10
DD
= f ( T
105
12
= -25 V
BSO 615 C
j
14
125
)
0,8
1999-10-28
16 nC
V
°C
DS max
Q
T
Gate
j
165
20