BSD235N L6327 Infineon Technologies, BSD235N L6327 Datasheet - Page 7

• Manufacturer Part Number: BSD235N L6327
• Description: MOSFET N-CH DUAL 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235N L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 63pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235N L6327; BSD235N L6327INTR; SP000442458

Rev 2.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
10
25
24
23
22
21
20
19
18
17
16
AV
-1
-2
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=16 Ω
-20
D
=250 µA
10
1
20
t
T
AV
j
10
[°C]
[µs]
2
60
100
125 °C
10
3
100 °C
25 °C
140
10
page 7
4
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
7
6
5
4
3
2
1
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
0.1
=0.95 A pulsed
g s
0.2
Q
Q
gate
g
Q
[nC]
sw
Q
4 V
0.3
g d
10 V
16 V
0.4
BSD235N
Q
g ate
2011-07-14
0.5