BSD235N Infineon Technologies, BSD235N Datasheet

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BSD235N

Manufacturer Part Number
BSD235N
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSD235N

Package
SOT-363 dual
Vds (max)
20.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
350.0 mOhm
Rds (on) (max) (@2.5v)
600.0 mOhm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSD235N
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSD235NH6327
0
Part Number:
BSD235NH6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSD235NL6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev 2.3
(1)
Features
• Dual N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSD235N
Remark: only one of both transistors in operation.
1)
2 Small-Signal-Transistor
Package
PG-SOT-363 L6327: 3000 pcs/ reel
j
=25 °C, unless otherwise specified
Tape and Reel Information
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
JESD22-A114 -HBM
page 1
A
A
A
j,max
A
=0.95 A, R
=0.95 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
GS
V
R
I
Product Summary
=16 V,
=16 Ω
D
Marking
X6s
DS
DS(on),max
Lead Free
Yes
V
V
GS
GS
-55 ... 150
0 (<250V)
55/150/56
=4.5 V
=2.5 V
260 °C
Value
0.95
0.76
±12
3.8
1.6
0.5
6
PG-SOT-363
1
Packing
Non dry
2
0.95
6
350
600
BSD235N
20
3
5
Unit
A
mJ
kV/µs
V
W
°C
4
V
A
2011-07-14

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BSD235N Summary of contents

Page 1

... =0. = /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg JESD22-A114 -HBM page 1 BSD235N 20 V =4.5 V 350 mΩ =2.5 V 600 V GS 0.95 A PG-SOT-363 Lead Free Packing Yes Non dry Value Unit ...

Page 2

... =150 ° = GSS =0. DS(on =4 =0. |>2 DS(on)max g fs =0. page 2 BSD235N Values Unit min. typ. max 250 K 0.7 0.95 1.2 μ 100 - - 100 nA - 415 600 mΩ - 266 350 , 2011-07-14 ...

Page 3

... = =0. 4 plateau I S =25 ° S,pulse = =0. =25 ° = =0. /dt =100 A/µ page 3 BSD235N Values Unit min. typ. max 0.5 A ...

Page 4

... T [° Max. transient thermal impedance =f(t Z thJA p parameter 100 µ [V] DS page 4 BSD235N ≥4 120 T [° 0.5 0.2 0.1 0.05 0.01 single pulse - [s] ...

Page 5

... V 400 300 2.5 V 200 2.3 V 100 [ Typ. forward transconductance =f °C 2 150 ° [V] GS page 5 BSD235N ); T =25 ° 2 3 [A] D =25 ° [ 2011-07-14 ...

Page 6

... Forward characteristics of reverse diode =25°C =f parameter Ciss 0 10 Coss -1 10 Crss - [V] DS page 6 BSD235N ); =1.6 µ typ 100 140 T [° 150 °C, 98% 25 °C 25 °C, 98% 150 °C 0.4 0.8 1.2 V ...

Page 7

... °C 4 100 °C 125 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSD235N ); I =0.95 A pulsed 0.1 0.2 0.3 0.4 Q [nC] gate 0.5 g ate 2011-07-14 ...

Page 8

... Package Outline: Footprint: Reflow soldering: Dimensions in mm Rev 2.3 SOT-363 Packing: page 8 BSD235N 2011-07-14 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 BSD235N 2011-07-14 ...

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