IRF7342TRPBF International Rectifier, IRF7342TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7342TRPBF
• Description: MOSFET 2P-CH 55V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7342TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -3.4 A
• Gate Charge, Total: 26 nC
• Package Type: SO-8
• Polarization: Dual P-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 0.170 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 43 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 3.3 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.105Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3.4A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7342PBFTR

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100
1200
0.1
10
960
720
480
240
0.0001
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
-V
DS
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
(THERMAL RESPONSE)
0.001
=
=
=
=
SINGLE PULSE
0V,
C
C
C
gs
gd
ds
C rss
C iss
C oss
+ C
+ C
10
f = 1MHz
gd ,
gd
C
ds
0.01
t , Rectangular Pulse Duration (sec)
SHORTED
1
100
0.1
20
16
12
8
4
0
0
I =
D
-3.1A
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
Q , Total Gate Charge (nC)
G
10
J
IRF7342PbF
DM
x Z
1
V
V
V
20
DS
DS
DS
thJA
P
2
10
DM
=-48V
=-30V
=-12V
+ T
A
t
1
30
t
2
100
40
5